Academia SinicaTIGP-NANO

Nano Science and Technology Program
Taiwan International Graduate Program

Artificial Intelligence and Advanced Nanotechnology [3]

課程名稱
Course Title
尖端材料之基礎與應用
Advanced Materials: Fundamentals and Applications
開課學期
Semester
114-2 (2026 Spring)
開課系所
Department
物理學系
Physics
授課教師
Lecturer
林麗瓊
Li-Chyong Chen
課程編號
Curriculum Number
Phys8150
班次
Class
學分
Credits
3
全/半年
Full/Half Yr.
Half Yr.
必/選修
Required/ Elective
Elective
上課時間
Schedule
週一上午 9:10-12:10
Monday morning 9:10-12:10
上課地點
Classroom
凝態中心212室
CCMS Room 212
備註
Remarks
◎課程核心能力(Core competencies of the course):
  • 基礎物理知識 Basic Physics Knowledge
  • 中階物理知識 Intermediate Physics Knowledge
  • 研究導向物理知識 Research Oriented Physics Knowledge
◎課程分類對照(Course classification comparison):
  • 固態物理領域 Field of Solid State Physics
  • 綜合領域 Comprehensive Field
課程大綱
Course Syllabus
課程概述
Course Description
In this course, students will learn the fundamental properties, synthesis methods and applications of various advanced materials, ranging from semiconductors, to quantum matters and low-dimensional nano-materials.
Start from Si technology, you will learn the thermodynamics and kinetics of bulk and thin film growth processes. Especially, the principles and development of the specific process and factors that control the material quality will be taught. In addition, some important issues like contact problem, doping and dielectric layer would be discussed. Besides Si, the second and third generation semiconductors, such as GaAs and GaN, would be introduced. Breakthroughs in synthesis of these materials have enabled or enhanced their unique properties, which can change our daily life.
After introducing the semiconductor properties and applications, we will take a step forward to a variety of materials, including ferroelectrics, oxide-based superconductor, spintronics materials, followed by energy materials such as thermoelectrics, batteries, perovskites, polymers and metal organic framework (MOF). Low-dimensional materials from 0D, 1D to 2D will be taught in the end of the course.
課程目標
Course Objective
This multidisciplinary course will provide the knowledge of the physics and materials science of different advanced materials. Moreover, the course provides a comprehensive overview of a variety of growth methods, ranging from solution-based process, solid state synthesis, ball milling, to vapor phase deposition techniques such as sputtering, CVD, MOCVD, and MBE.
The ultimate course objective is to enhance the critical and innovative thinking of students by in depth understanding the relationship between the growth/morphology/structure of the materials and the fundamental properties, which holds the key for realizing practical applications of these advanced materials and devices.
課程要求
Course Requirement
General physics and General chemistry
Office Hours Wednesday, 2-4 pm
參考書目
Readings
  1. KITTEL, Charles, Introduction to Solid State Physics, 8th edition. Wiley, 2004
  2. CHUNG, Yip-Wah and KAPOOR, Monica, Introduction to Materials Science and Engineering, 2nd edition. CRC Press, to appear in April 2022. (1st edition published in 2006)
  3. NAKAMURA, Shuji; CHICHIBU, Shigefusa F. (ed.). Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes. CRC Press, 2000
  4. NAKAMURA, Shuji; PEARTON, Stephen; FASOL, Gerhard. The Blue Laser Diode: The Complete Story. Springer Science & Business Media, 2000
  5. XIAO, Hong. Introduction to Semiconductor Manufacturing Technology, 2nd edition. SPIE Press E-Books, 2012
  6. PIERSON, H. O. Handbook of Chemical Vapor Deposition. Noyes Publication, 1999
  7. JONES, Anthony C.; HITCHMAN, Michael L. (ed.). Chemical Vapor Deposition: Precursors, Processes and Applications. Royal Society of Chemistry, 2009
評量方式
Evaluation
Final Exam: 55%
Midterm Oral Presentation: 15%
Midterm Essay: 15%
Engagement in Class (e.g., asking questions, etc.): 15%
課程進度
Progress
週次 Week 日期 Date 單元主題 Topic
Week 1 2/23 Si, bulk and thin film growth, semiconductor fundamentals, doping, contact, dielectric, devices, beyond Moore's law (LC Chen)
Week 2 3/2 Si, bulk and thin film growth, semiconductor fundamentals, doping, contact, dielectric, devices, beyond Moore's law (LC Chen)
Week 3 3/9 GaAs, MBE growth, direct band gap, LEDs, laser diodes, photovoltaic, etc.(LC Chen)
Week 4 3/16 GaN, MOCVD growth, alloying, blue LED, lighting and HEMT (KH Chen)
Week 5 3/23 Spintronics & quantum matters (I), sputtering principles & various industrial applications (DR Qu)
Week 6 3/30 Spintronics & quantum matters (II) (DR Qu) //SiC, AlN, high power devices (LC Chen)
Week 7 4/6 National Holiday
Week 8 4/13 Midterm (Oral presentation)
Week 9 4/20 Bulk crystals, solid state synthesis (& high pressure), X-ray diffraction, ferroelectrics (WT Chen) *Essay due in this week
Week 10 4/27 Solar cells, polymers and perovskites, molecular designs, solution-based processes (SH Huang)
Week 11 5/4 CO2 capture and mass transfer in porous materials (DY Kang)
Week 12 5/11 Thermoelectrics, ball milling (KH Chen)
Week 13 5/18 Battery materials (BJ Hwang)
Week 14 5/25 0D & 1D materials for various applications; 2D materials for catalysis (LC Chen)
Week 15 6/1 2D materials: CVD growth and characterization, electronic and optoelectronic applications (WH Wang)
Week 16 6/8 Final Exam (Written Test)